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Silicon single crystals growing furnace "Izoterm-20"
Silicon single crystals growing furnace "Izoterm-20"       It is used for automatic growing (except seeding) of silicon single crystals with diameter up to 250 mm and total length up to 1600 mm from Ø 508 mm crucible by Czochralski method

Silicon single crystals growing furnace "Izoterm-20"


It is used for automatic growing (except seeding) of silicon single crystals with diameter up to 250 mm and total length up to 1600 mm from Ø 508 mm crucible by Czochralski method.

 Crystal diameter, not more 250 mm
 Crystal length, not more1600 mm
 Seed movement speed0,1...8,0 mm/min
 Seed rotation1,0...30,0 rpm
 Maintenance accuracy of seed movement and rotation± 1 %
 Total crucible travel400 mm
 Crucible lift rate0,01...2,0 mm/min
 Crucible rotation1,0...20,0 rpm
 Maintenance accuracy of crucible lift rate and rotation                    ± 1 %
 Crucible diameter508 mm
 Limiting residual pressure5x10-3 Hg mm
 Max evacuation rate150 l/s
 Cooling water consumption10 m3/hr
 Inlet pressure of cooling water, not less0,3 MPa
 Argon consumption, not more3600 l/hr
 Recommended argon pressure at gas inlet system 0,25 MPa
 Recommended pressure of compressed air0,6 MPa
 Compressed air process consumption, not more0,1  m3
 Power supply: 
 - voltage3x380 +N
 - frequency50 Hz
 Max power of the heater150 kVA
 Heater supply voltage0...60 V
 Overail dimensions: 
 - length4000 mm
 - width2700 mm
 - height6200 mm
 Weight6000 kg
 
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Licenses
 Licenses
Certificate of Conformity of Quality Management System ROSS RU.3791.04OSH1 certifying quality management system requirements of GOST ISO 9001-2011 (ISO 9001: 2008)new
Certificate of Conformity of Quality Management System ROSS RU.3791.04ОШ1 certifying quality management system requirements of GOST ISO 9001-2011 (ISO 9001: 2008)
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